Gallium nitride (GaN) devices have emerged as high-performance alternatives to silicon-based transistors. GaN possesses significantly higher electric field strength than silicon. Gallium nitride has 3.4 eV bandgap compared to silicon’s 1.12 eV bandgap. Thus, usage of GaN makes power conversion solutions more compact and energy-efficient. https://www.transparencymarketresearch.com/gan-power-devices-market.html